MJE4343G datasheet(1/8 Pages) ONSEMI

部品番号	MJE4343G

部品情報	High-Voltage - High Power Transistors

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May, 2012 − Rev. 5

1

Publication Order Number:

MJE4343/D

MJE4343 (NPN),

MJE4353 (PNP)

High-Voltage - High Power

Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

Features

• High Collector−Emitter Sustaining Voltage −

NPN PNP

VCEO(sus) = 160 Vdc − MJE4343 MJE4353

• High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ)

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 8.0 Adc

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

160

Vdc

Collector−Base Voltage

VCB

160

Vdc

Emitter−Base Voltage

VEB

7.0

Vdc

Collector Current

−

Continuous

Peak (Note 1)

IC

16

20

Adc

Base Current − Continuous

IB

5.0

Adc

Total Power Dissipation @ TC

= 25°C

PD

125

Watts

Operating and Storage Junc-

tion

Temperature Range

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction

to Case

RqJC

1.0

°C/W

1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%.

SOT−93

CASE 340D

STYLE 1

16 AMPS

POWER TRANSISTORS

COMPLEMENTARY

SILICON

160 VOLTS

http://onsemi.com

3

2

1

4

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

同様の部品番号 - MJE4343G

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Savantic, Inc.	MJE4343	139Kb / 3P	Silicon NPN Power Transistors
ON Semiconductor	MJE4343	147Kb / 7P	High?뭋oltage High Power Transistors March, 2006 ??Rev. 4

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