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FQD5P20TM データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQD5P20TM データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 36.2mH, IAS = -3.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.17 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA VDS = -160 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.85 A -- 1.1 1.4 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.85 A -- 2.2 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 330 430 pF Coss Output Capacitance -- 75 98 pF Crss Reverse Transfer Capacitance -- 12 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -100 V, ID = -4.8 A, RG = 25 Ω -- 9 28 ns tr Turn-On Rise Time -- 70 150 ns td(off) Turn-Off Delay Time -- 12 35 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = -160 V, ID = -4.8 A, VGS = -10 V -- 10 13 nC Qgs Gate-Source Charge -- 2.8 -- nC Qgd Gate-Drain Charge -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -14.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.7 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs -- 175 -- ns Qrr Reverse Recovery Charge -- 1.07 -- µC • ©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008 |
同様の部品番号 - FQD5P20TM |
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同様の説明 - FQD5P20TM |
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