SS1H9, SS1H10

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Vishay General Semiconductor

Revision: 14-Dec-12

3

Document Number: 88747

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

T

T

T

Instantaneous Forward Voltage (V)

100

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.01

0.1

1

10

100

1000

10 000

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

100

1000

0.1

1

10

100

Reverse Voltage (V)

1

10

100

0.01

0.1

1

10

100

t - Pulse Duration (s)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)