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SI7682DP-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI7682DP-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 Vishay Siliconix Si7682DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 35 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 6.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.4 2.5 V VDS = VGS, ID = 5 mA 2.2 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0075 0.0090 Ω VGS = 4.5 V, ID = 9.5 A 0.0105 0.0130 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 35 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1595 pF Output Capacitance Coss 375 Reverse Transfer Capacitance Crss 150 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 11 A 24 38 nC VDS = 15 V, VGS = 4.5 V, ID = 11 A 11 17 Gate-Source Charge Qgs 4 Gate-Drain Charge Qgd 3.1 Gate Resistance Rg f = 1 MHz 0.2 0.55 0.9 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω 18 30 ns Rise Time tr 82 130 Turn-Off Delay Time td(off) 18 30 Fall Time tf 10 16 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 10 V, Rg = 1 Ω 11 18 Rise Time tr 55 85 Turn-Off Delay Time td(off) 23 35 Fall Time tf 815 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 20 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2.3 A 0.76 1.1 V Body Diode Reverse Recovery Time trr IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C 30 45 ns Body Diode Reverse Recovery Charge Qrr 24 40 nC Reverse Recovery Fall Time ta 15.5 ns Reverse Recovery Rise Time tb 14.5 |
同様の部品番号 - SI7682DP-T1-E3 |
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同様の説明 - SI7682DP-T1-E3 |
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