SI4834BDY-T1-E3 datasheet(2/10 Pages) VISHAY

部品番号	SI4834BDY-T1-E3

部品情報	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Download	10 Pages

Scroll/Zoom	100%

メーカー	VISHAY [Vishay Siliconix]

ホームページ	http://www.vishay.com

Logo

2 / 10 page

www.vishay.com

2

Document Number: 72064

S09-0869-Rev. D, 18-May-09

Vishay Siliconix

Si4834BDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.8

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

100

µA

Ch-2

1

VDS = 30 V, VGS = 0 V, TJ = 85 °C

Ch-1

2000

Ch-2

15

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 7.5 A

0.017

0.022

Ω

VGS = 4.5 V, ID = 6.5 A

0.024

0.030

Forward Transconductanceb

gfs

VDS = 15 V, ID = 7.5 A

19

S

Diode Forward Voltageb

VSD

IS = 1 A, VGS = 0 V

Ch-1

0.47

0.5

V

Ch-2

0.75

1.2

Dynamica

Total Gate Charge

Qg

VDS = 15 V, VGS = 4.5 V, ID = 7.5 A

711

nC

Gate-Source Charge

Qgs

2.9

Gate-Drain Charge

Qgd

2.5

Gate Resistance

Rg

0.5

1.5

2.6

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

915

ns

Rise Time

tr

10

17

Turn-Off Delay Time

td(off)

19

30

Fall Time

tf

915

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, dI/dt = 100 A/µs

Ch-1

32

55

Ch-2

35

55

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 1.0 A

0.47

0.50

V

IF = 1.0 A, TJ = 125 °C

0.36

0.42

Maximum Reverse Leakage Current

Irm

VR = 30 V

0.004

0.100

mA

VR = 30 V, TJ = 100 °C

0.7

10

VR = - 30 V, TJ = 125 °C

3.0

20

Junction Capacitance

CT

VR = 10 V

50

pF

同様の部品番号 - SI4834BDY-T1-E3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4834BDY	93Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. C, 29-Dec-03
	SI4834BDY	116Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17
	SI4834BDY	116Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17

More results

同様の説明 - SI4834BDY-T1-E3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4808DY	46Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
	SI4818DY	68Kb / 8P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
	SI4816BDY	88Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 09-Aug-04
	SI4854DY	53Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 16-Apr-01
	SI4834BDY	93Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. C, 29-Dec-03
	SI4650DY	155Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-Jan-10
	SI4310BDY	152Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SI7872DP	149Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 18-Jul-08
	SI7842DP	133Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SIZ980BDT	239Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022

More results

SI4834BDY-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix

SI4834BDY-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix

同様の部品番号 - SI4834BDY-T1-E3

同様の説明 - SI4834BDY-T1-E3

Html Pages

1 2 3 4 5 6 7 8 9 10

データシートダウンロード

リンク URL

SI4834BDY-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix

SI4834BDY-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix

同様の部品番号 - SI4834BDY-T1-E3

同様の説明 - SI4834BDY-T1-E3

Html Pages

1 2 3 4 5 6 7 8 9 10

データシート ダウンロード

リンク URL

データシートダウンロード