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SI4834BDY-T1-E3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI4834BDY-T1-E3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 72064 S09-0869-Rev. D, 18-May-09 Vishay Siliconix Si4834BDY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.8 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 100 µA Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-1 2000 Ch-2 15 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 7.5 A 0.017 0.022 Ω VGS = 4.5 V, ID = 6.5 A 0.024 0.030 Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 19 S Diode Forward Voltageb VSD IS = 1 A, VGS = 0 V Ch-1 0.47 0.5 V Ch-2 0.75 1.2 Dynamica Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 711 nC Gate-Source Charge Qgs 2.9 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg 0.5 1.5 2.6 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 915 ns Rise Time tr 10 17 Turn-Off Delay Time td(off) 19 30 Fall Time tf 915 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs Ch-1 32 55 Ch-2 35 55 SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.50 V IF = 1.0 A, TJ = 125 °C 0.36 0.42 Maximum Reverse Leakage Current Irm VR = 30 V 0.004 0.100 mA VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 Junction Capacitance CT VR = 10 V 50 pF |
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同様の説明 - SI4834BDY-T1-E3 |
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