SI4686DY-T1-E3 datasheet(5/10 Pages) VISHAY

部品番号	SI4686DY-T1-E3

部品情報	N-Channel 30-V (D-S) MOSFET

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5 / 10 page

Document Number: 73422

S09-0228-Rev. B, 09-Feb-09

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5

Vishay Siliconix

Si4686DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

4

8

12

16

20

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating

0

1

2

3

4

5

6

25

50

75

100

125

150

TC - Case Temperature (°C)

同様の部品番号 - SI4686DY-T1-E3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4686DY	172Kb / 9P	N-Channel 30-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI4686DY	171Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI4686DY	171Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI4686DY-T1-E3

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	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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