SI4686DY-T1-E3 datasheet(1/10 Pages) VISHAY

部品番号	SI4686DY-T1-E3

部品情報	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si4686DY

Document Number: 73422

S09-0228-Rev. B, 09-Feb-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

Extremely Low Qgd WFET

® Technology

for Low Switching Losses

•

TrenchFET® Power MOSFETs

•

100 % Rg Tested

APPLICATIONS

•

High-Side DC/DC Conversion

- Notebook

- Server

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0095 at VGS = 10 V

18.2

9.2 nC

0.014 at VGS = 4.5 V

15

SO-8

S

G

D

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free)

Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

18.2

A

TC = 70 °C

14.5

TA = 25 °C

13.8b, c

TA = 70 °C

11b, c

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

4.3

TA = 25 °C

2.5b, c

Single-Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single-Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipation

TC = 25 °C

PD

5.2

W

TC = 70 °C

3.3

TA = 25 °C

3.0b, c

TA = 70 °C

1.9b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

35

42

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

20

24

同様の部品番号 - SI4686DY-T1-E3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4686DY	172Kb / 9P	N-Channel 30-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI4686DY	171Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI4686DY	171Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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