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FQPF10N60C データシート(PDF) 1 Page - Kersemi Electronic Co., Ltd.

部品番号 FQPF10N60C
部品情報  600V N-Channel MOSFET
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メーカー  KERSEMI [Kersemi Electronic Co., Ltd.]
ホームページ  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

FQPF10N60C データシート(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP10N60C
FQPF10N60C
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
9.5
9.5 *
A
- Continuous (TC = 100°C)
3.3
3.3 *
A
IDM
Drain Current
- Pulsed
(Note 1)
38
38 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
mJ
IAR
Avalanche Current
(Note 1)
9.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
156
50
W
- Derate above 25°C
1.25
0.4
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP10N60C
FQPF10N60C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.8
2.5
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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S
D
G
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.


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