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LMV722M データシート(PDF) 1 Page - Texas Instruments

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部品番号 LMV722M
部品情報  LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI - Texas Instruments

LMV722M データシート(HTML) 1 Page - Texas Instruments

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LMV721-N, LMV722-N
www.ti.com
SNOS414I – AUGUST 1999 – REVISED AUGUST 2013
LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
Check for Samples: LMV721-N, LMV722-N
1
FEATURES
DESCRIPTION
The LMV721-N (Single) and LMV722 (Dual) are low
2
(For Typical, 5 V Supply Values; Unless
noise, low voltage, and low power op amps, that can
Otherwise Noted)
be designed into a wide range of applications. The
Ensured 2.2V and 5.0V Performance
LMV721-N/LMV722 has a unity gain bandwidth of
Low Supply Current LMV721-N/2
10MHz, a slew rate of 5V/us, and a quiescent current
of 930uA/amplifier at 2.2V.
930µA/Amplifier at 2.2V
High Unity-Gain Bandwidth 10MHz
The LMV721-N/722 are designed to provide optimal
performance in low voltage and low noise systems.
Rail-to-Rail Output Swing
They provide rail-to-rail output swing into heavy
at 600
Ω Load
120mV from Either Rail at
loads.
The
input
common-mode
voltage
range
2.2V
includes ground, and the maximum input offset
at 2k
Ω Load
50mV from Either Rail at 2.2V
voltage are 3.5mV (Over Temp) for the LMV721-
N/LMV722. Their capacitive load capability is also
Input Common Mode Voltage Range Includes
good at low supply voltages. The operating range is
Ground
from 2.2V to 5.5V.
Silicon Dust, SC70-5 Package 2.0x2.0x1.0 mm
The chip is built with TI's advanced Submicron
Input Voltage Noise 9 nV/
√Hz at f = 1KHz
Silicon-Gate BiCMOS process. The single version,
LMV721-N, is available in 5 pin SOT-23 and a SC70
APPLICATIONS
(new)
package.
The
dual
version,
LMV722,
is
Cellular an Cordless Phones
available in an SOIC-8 and VSSOP-8 package.
Active Filter and Buffers
Laptops and PDAs
Battery Powered Electronics
Typical Application
Figure 1. A Battery Powered Microphone Preamplifier
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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