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TL431IDR2G データシート(PDF) 2 Page - ON Semiconductor

部品番号 TL431IDR2G
部品情報  Programmable Precision References
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TL431IDR2G データシート(HTML) 2 Page - ON Semiconductor

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TL431, A, B Series, NCV431A, B
http://onsemi.com
2
Representative Block Diagram
1.0 k
Cathode
(K)
2.5 Vref
Anode (A)
Reference
(R)
4.0 k
150
Symbol
10 k
20 pF
800
Cathode (K)
3.28 k
Representative Schematic Diagram
Component values are nominal
Anode (A)
-
+
Anode
(A)
800
Reference
(R)
2.4 k
7.2 k
20 pF
800
Cathode
(K)
Reference
(R)
This device contains 12 active transistors.
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Symbol
Value
Unit
Cathode to Anode Voltage
VKA
37
V
Cathode Current Range, Continuous
IK
−100 to +150
mA
Reference Input Current Range, Continuous
Iref
−0.05 to +10
mA
Operating Junction Temperature
TJ
150
°C
Operating Ambient Temperature Range
TA
°C
TL431I, TL431AI, TL431BI
−40 to +85
TL431C, TL431AC, TL431BC
0 to +70
NCV431AI, NCV431B, TL431BV
−40 to +125
Storage Temperature Range
Tstg
−65 to +150
°C
Total Power Dissipation @ TA = 25°C
PD
W
Derate above 25°C Ambient Temperature
D, LP Suffix Plastic Package
0.70
P Suffix Plastic Package
1.10
DM Suffix Plastic Package
0.52
Total Power Dissipation @ TC = 25°C
PD
W
Derate above 25°C Case Temperature
D, LP Suffix Plastic Package
1.5
P Suffix Plastic Package
3.0
ESD Rating
HBM
MM
>2000
>200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Condition
Symbol
Min
Max
Unit
Cathode to Anode Voltage
VKA
Vref
36
V
Cathode Current
IK
1.0
100
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
D, LP Suffix
Package
P Suffix
Package
DM Suffix
Package
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
178
114
240
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83
41
°C/W


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