2N4920 datasheet(1/6 Pages) ONSEMI

部品番号	2N4920

部品情報	Medium-Power Plastic PNP

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July, 2004 − Rev. 11

1

Publication Order Number:

2N4918/D

2N4918 − 2N4920* Series

Preferred Device

Medium−Power Plastic PNP

Silicon Transistors

These medium−power, high−performance plastic devices are

designed for driver circuits, switching, and amplifier applications.

Features

• Pb−Free Package is Available**

• Low Saturation Voltage − V

CE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A

• Excellent Power Dissipation Due to Thermopad Construction,

PD = 30 W @ TC = 25

_C

• Excellent Safe Operating Area

• Gain Specified to I

C = 1.0 A

• Complement to NPN 2N4921, 2N4922, 2N4923

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

2N4918

2N4919

2N4920

VCEO

40

60

80

Vdc

Collector − Base Voltage

2N4918

2N4919

2N4920

VCBO

40

60

80

Vdc

Emitter − Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

(Note 1)

IC

(Note 2)

1.0

3.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TA = 25°C

Derate above 25

°C

PD

30

0.24

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 65 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The

3.0 A max value is based upon actual current−handling capability of the

device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

THERMAL CHARACTERISTICS (Note 3)

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

qJC

4.16

°C/W

3. Recommend use of thermal compound for lowest thermal resistance.

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

3.0 A, 40−80 V, 30 W

GENERAL PURPOSE

POWER TRANSISTORS

*Preferred devices are recommended choices for future

use and best overall value.

TO−225

CASE 077

STYLE 1

1

2

3

http://onsemi.com

xx

= 18, 19, 20

Y

= Year

WW

= Work Week

MARKING DIAGRAM

YWW

2N

49xx

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

同様の部品番号 - 2N4920

メーカー	部品番号	データシート	部品情報
ON Semiconductor	2N4920	113Kb / 8P	GENERAL.PURPOSE POWER TRANSISTORS April, 2002 ??Rev. 10
ON Semiconductor	2N4920	120Kb / 6P	Medium-Power Plastic PNP Silicon Transistors July, 2004 ??Rev. 11
Savantic, Inc.	2N4920	104Kb / 3P	Silicon PNP Power Transistors
Inchange Semiconductor ...	2N4920	131Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2N4920	197Kb / 1P	MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS

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同様の説明 - 2N4920

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