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IRFB20N50K データシート(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRFB20N50K データシート(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
4 / 7 page 4 IRFB20N50K, SiHFB20N50K Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C iss C oss C rss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 0 4 8 12 16 20 QG, Total Gate Charge (nC) For test circuit see figure 13 ? ? ? ??? VDS = 400 V VDS = 250 V VDS = 100 V 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to Drain Voltage (V) 0.1 1.0 10.0 100.0 TJ = 150 °C TJ = 25 °C VGS = 0 V 1 10 100 1000 10000 V DS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 T C = 25 °C T J = 150 °C Single Pulse 1 ms 10 ms Operation in this area limited by rDS(on) 100 µs www.kersemi.com |
同様の部品番号 - IRFB20N50K |
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同様の説明 - IRFB20N50K |
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