CAT22C10WE-20-T1 datasheet(8/10 Pages) ONSEMI

部品番号	CAT22C10WE-20-T1

部品情報	256-Bit Nonvolatile CMOS Static RAM

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CAT22C10

8

Doc. No. MD-1082, Rev. R

Characteristics subject to change without notice.

Recall

At anytime, except during a store operation, taking the

RECALL pin low will initiate a recall operation. This is

independent of the state of

CS, WE, or A0–A5. After the

RECALL pin has been held low for the duration of the

Recall Pulse Width (tRCP), the recall will continue inde-

pendent of any other inputs. During the recall, the entire

contents of the EEPROM array is transferred to the

Static RAM array. The first byte of data may be externally

accessed after the recalled data access time from end of

recall (tARC) is met. After this, any other byte may be

accessed by using the normal read mode.

If the

RECALL pin is held low for the entire Recall Cycle

time (tRCC), the contents of the Static RAM may be

immediately accessed by using the normal read mode.

A recall operation can be performed an unlimited num-

ber of times without affecting the integrity of the data.

The outputs I/O0–I/O3 will go into the high impedance

state as long as the

RECALL signal is held low.

Store

At any time, except during a recall operation, taking the

STORE pin low will initiate a store operation. This takes

place independent of the state of

CS, WE or A0–A5. The

STORE pin must be held low for the duration of the Store

Pulse Width (tSTP) to ensure that a store operation is

initiated. Once initiated, the

STORE pin becomes a

“Don’t Care”, and the store operation will complete its

transfer of the entire contents of the Static RAM array

into the EEPROM array within the Store Cycle time

(tSTC). If a store operation is initiated during a write cycle,

the contents of the addressed Static RAM byte and its

corresponding byte in the EEPROM array will be un-

known.

During the store operation, the outputs are in a high

impedance state. A minimum of 100,000 store opera-

tions can be performed reliably and the data written into

the EEPROM array has a minimum data retention time

of 10 years.

DATA PROTECTION DURING POWER-UP AND

POWER-DOWN

The CAT22C10 has on-chip circuitry which will prevent

a store operation from occurring when VCC falls below

3.0V typ. This function eliminates the potential hazard of

spurious signals initiating a store operation when the

system power is below 3.0V typ.

Figure 4. Recall Cycle Timing

Figure 5. Store Cycle Timing

CS

DATA I/O

RECALL

ADDRESS

DATA UNDEFINED

DATA VALID

HIGH-Z

tRCZ

tORC

tARC

tRCP

tRCC

STORE

DATA I/O

tSTZ

HIGH-Z

tSTP

tSTC

同様の部品番号 - CAT22C10WE-20-T1

メーカー	部品番号	データシート	部品情報
ON Semiconductor	CAT22C10WE-20-T1	177Kb / 10P	256-Bit Nonvolatile CMOS Static RAM Doc. No. MD-1082, Rev. R

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