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SI3447DV データシート(PDF) 4 Page - Fairchild Semiconductor |
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SI3447DV データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page Si3447DV Rev A(W) Typical Characteristics 0 1 2 3 4 5 0 5 10 15 20 25 Qg, GATE CHARGE (nC) ID = -5.5A VDS = -5V -15V -10V 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100µs RDS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 156 oC/W TA = 25 oC 0 1 2 3 4 5 0.1 1 10 100 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 156 oC/W T A = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.00 1 0.0 1 0.1 1 0 .000 1 0 . 001 0.01 0.1 1 1 0 100 10 00 t 1 , T IM E ( s e c ) R θJA (t) = r(t) + R θJA R θJA = 15 6 ° C /W T J - T A = P * R θ JA (t) D u ty C y c le , D = t1 / t2 P( p k ) t1 t2 S IN G LE P U LS E 0.01 0.02 0. 0 5 0. 1 0.2 D = 0 .5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
同様の部品番号 - SI3447DV |
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同様の説明 - SI3447DV |
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