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SI4431 データシート(PDF) 1 Page - Fairchild Semiconductor |
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SI4431 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page January 2001 2001 Fairchild Semiconductor International Si4431DY Rev A Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor Drive Features • –6.3 A, –30 V. R DS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) -6.3 A – Pulsed -40 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4431 Si4431DY 13’’ 12mm 2500 units |
同様の部品番号 - SI4431 |
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同様の説明 - SI4431 |
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