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PZTA44115 データシート(PDF) 2 Page - NXP Semiconductors |
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PZTA44115 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 1999 May 21 2 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA44 FEATURES • Low current (max. 300 mA) • High voltage (max. 400 V). APPLICATIONS • Telecommunication. DESCRIPTION NPN high-voltage transistor in a SOT223 plastic package. PINNING PIN DESCRIPTION 1 base 2, 4 collector 3 emitter handbook, halfpage 4 12 3 MAM287 Top view 3 2, 4 1 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 500 V VCEO collector-emitter voltage open base − 400 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 300 mA ICM peak collector current − 300 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.35 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
同様の部品番号 - PZTA44115 |
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同様の説明 - PZTA44115 |
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