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SI4925DY データシート(PDF) 2 Page - Fairchild Semiconductor |
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SI4925DY データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = -250 µA -30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = -250 µA, Referenced to 25 oC -21 mV/ oC I DSS Zero Gate Voltage Drain Current V DS = -24 V, VGS = 0 V -1 µA T J = 55°C -10 µA I GSSF Gate - Body Leakage, Forward V GS = 16 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -16 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = -250 µA -1 -1.7 -3 V ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC 4 mV/ oC R DS(ON) Static Drain-Source On-Resistance V GS = -10 V, I D = -6 A 0.025 0.032 Ω T J =125°C 0.033 0.051 V GS = -4.5 V, I D = -5 A 0.034 0.045 I D(ON) On-State Drain Current V GS = -10 V, VDS = -5 V -20 A g FS Forward Transconductance V DS = -10 V, I D = -6 A 16 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = -15 V, VGS = 0 V, f = 1.0 MHz 1540 pF C oss Output Capacitance 400 pF C rss Reverse Transfer Capacitance 170 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DS = -15 V, I D = -1 A 13 24 ns t r Turn - On Rise Time V GEN = -10 V, RGEN = 6 Ω 22 35 ns t D(off) Turn - Off Delay Time 47 75 ns t f Turn - Off Fall Time 18 30 ns Q g Total Gate Charge V DS = -10 V, I D = -6 A, 14.5 20 nC Q gs Gate-Source Charge V GS = -5 V 4 nC Q gd Gate-Drain Charge 5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current -1.3 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = -1.3 A (Note 2) -0.73 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Si4925DY Rev.A c. 135 OC/W on a 0.003 in2 pad of 2oz copper. b. 125 OC/W on a 0.02 in2 pad of 2oz copper. a. 78 OC/W on a 0.5 in2 pad of 2oz copper. |
同様の部品番号 - SI4925DY |
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同様の説明 - SI4925DY |
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