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FQPF13N50T データシート(PDF) 3 Page - Fairchild Semiconductor |
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FQPF13N50T データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V ※ Note : I D = 13.4 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25℃ 150℃ ※ Notes: 1. V GS = 0V 2. 250μ s Pulse Test V SD , Source-Drain Voltage [V] 0 10 203040 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 24 68 10 10 -1 10 0 10 1 ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test -55℃ 150℃ 25℃ V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V GS Top : 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics www.fairchildsemi.com ©20 00 Fairchild Semiconductor Corporation FQP13N50 / FQPF13N50 Rev. C0 |
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同様の説明 - FQPF13N50T |
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