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SI6426DQ データシート(PDF) 3 Page - Fairchild Semiconductor |
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SI6426DQ データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page Si6426DQ Rev B(W) Typical Characteristics 0 5 10 15 20 25 30 00.5 11.522.533.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V 2.5V 2.0V VGS = 4.5V 3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) VGS = 2.0V 3.5V 3.0V 4.0V 4.5V 2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 5.4A VGS = 4.5V 0.01 0.03 0.05 0.07 0.09 0.11 1 234 5 VGS, GATE TO SOURCE VOLTAGE (V) ID = 2.7A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 5 10 15 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 125oC VDS = 5V 25oC 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25oC -55oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - SI6426DQ |
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同様の説明 - SI6426DQ |
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