January 2002

2002 Fairchild Semiconductor Corporation

Si6955DQ Rev C(W)

Si6955DQ

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild's Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

Applications

•

Load switch

•

Battery protection

•

DC/DC conversion

•

Power management

Features

• –2.5 A, –30 V,

• Low gate charge

• High performance trench technology for extremely

• Low profile TSSOP-8 package

D1

S1

S1

G1

D2

S2

S2

G2

TSSOP-8

Pin 1

8

7

6

5

1

2

3

4

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–30

V

Gate-Source Voltage

±20

V

Drain Current – Continuous

(Note 1)

–2.5

A

– Pulsed

–20

Power Dissipation for Single Operation

(Note 1a)

1.0

W

(Note 1b)

0.6

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

100

°C/W

(Note 1b)

125

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6955

Si6955DQ

13’’

12mm

2500 units