Si6955DQ Rev C(W)

Typical Characteristics

0

2

4

6

8

10

0

1.6

3.2

4.8

6.4

-10V

-15V

0

100

200

300

400

0

6

12

18

24

30

f = 1 MHz

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

DC

1s

100ms

100

µs

SINGLE PULSE

10ms

1ms

10

µs

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.