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データシートサーチシステム |
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データシートサーチシステム |
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TIP41C データシート(PDF) 1 Page - Fairchild Semiconductor |
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TIP41C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 65 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C IC = 30mA, IB = 0 40 60 80 100 V V V V ICEO Collector Cut-off Current : TIP41/41A : TIP41B/41C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA ICES Collector Cut-off Current : TIP41 : TIP41A : TIP41B : TIP41C VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 400 400 400 400 µA µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A 30 15 75 VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 3.0 MHz TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C 1.Base 2.Collector 3.Emitter 1 TO-220 |
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