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2SK210-GR データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SK210-GR
部品情報  FM Tuner Applications VHF Band Amplifier Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK210-GR データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK210
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
• High power gain: GPS = 24dB (typ.) (f = 100 MHz)
• Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
• High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDO
−18
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = −1.0 V, VDS = 0 V
−10
nA
Gate-drain breakdown voltage
V (BR) GDO
IG = −100 μA
−18
V
Drain current
IDSS
(Note)
VGS = 0 V, VDS = 10 V
3
24
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 1 μA
−1.2
−3
V
Forward transfer admittance
⎪Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
7
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
3.5
pF
Reverse transfer capacitance
Crss
VGD = −10 V, f = 1 MHz
0.65
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure 1)
24
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure 1)
1.8
3.5
dB
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)


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