ISL1208IRT8Z-TK datasheet(4/24 Pages) INTERSIL

部品番号	ISL1208IRT8Z-TK

部品情報	Low Power RTC with Battery Backed SRAM

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メーカー	INTERSIL [Intersil Corporation]

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4 / 24 page

4

FN8085.8

September 12, 2008

Absolute Maximum Ratings

Thermal Information

Voltage on VDD, VBAT, SCL, SDA, and IRQ Pins (Note 3)

(respect to GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V

Voltage on X1 and X2 Pins

(respect to GND) . . . . . . . . . . . . . -0.5V to VDD + 0.5 (VDD Mode)

-0.5V to VBAT + 0.5 (VBAT Mode)

Latchup (Note 4) ................Class II, Level B @ +85°C

Thermal Resistance (Typical, Note 1)

θJA (°C/W) θJC (°C/W)

SOIC Package . . . . . . . . . . . . . . . . . . .

95

N/A

MSOP Package . . . . . . . . . . . . . . . . . .

128

N/A

TDFN Package (Note 2). . . . . . . . . . . .

53.7

2.8

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTES:

1.

θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See

Tech Brief TB379.

2. For

θ

JC, the “case temp” location is the center of the exposed metal pad on the package underside.

3. The VDD and SDA pins should not be subjected to negative voltage while the VBAT pin is biased, otherwise latchup can result. See the

Applications section.

4. Jedec Class II pulse conditions and failure criterion used. Level B exceptions are using a negative pulse limited to -0.5V.

DC Operating Characteristics – RTC Temperature = -40°C to +85°C, unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

NOTES

MIN

(Note 9)

TYP

(Note 8)

MAX

(Note 9)

UNITS

VDD

Main Power Supply

2.7

5.5

V

VBAT

Battery Supply Voltage

1.8

5.5

V

IDD1

Supply Current

VDD = 5V

5, 6

2

6

µA

VDD = 3V

1.2

4

µA

IDD2

Supply Current With I2C Active

VDD = 5V

5, 6

40

120

µA

IDD3

Supply Current (Low Power Mode)

VDD = 5V, LPMODE = 1

5

1.4

5

µA

IBAT

Battery Supply Current

VBAT = 3V

5

400

950

nA

ILI

Input Leakage Current on SCL

100

nA

ILO

I/O Leakage Current on SDA

100

nA

VTRIP

VBAT Mode Threshold

1.6

2.2

2.6

V

VTRIPHYS

VTRIP Hysteresis

10

30

75

mV

VBATHYS

VBAT Hysteresis

15

50

100

mV

IRQ/FOUT

VOL

Output Low Voltage

VDD = 5V

IOL = 3mA

0.4

V

VDD = 2.7V

IOL = 1mA

0.4

V

Power-Down Timing Temperature = -40°C to +85°C, unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

NOTES

MIN

(Note 9)

TYP

(Note 8)

MAX

(Note 9)

UNITS

VDD SR-

VDD Negative Slewrate

7

10

V/ms

Serial Interface Specifications

Over the recommended operating conditions unless otherwise specified.

SYMBOL

PARAMETER

TEST CONDITIONS

NOTES

MIN

(Note 9)

TYP

(Note 8)

MAX

(Note 9)

UNITS

SERIAL INTERFACE SPECS

VIL

SDA and SCL Input Buffer LOW

Voltage

-0.3

0.3 x

VDD

V

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