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BYC8D-600 データシート(PDF) 5 Page - NXP Semiconductors |
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BYC8D-600 データシート(HTML) 5 Page - NXP Semiconductors |
5 / 11 page BYC8D-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 December 2010 5 of 11 NXP Semiconductors BYC8D-600 Hyperfast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =8A; Tj =25°C - 2 2.9 V IF =8A; Tj = 150 °C; see Figure 4 - 1.5 1.85 V IR reverse current VR =600 V - 9 40 µA VR =500 V; Tj = 100 °C - 1.1 3 mA Dynamic characteristics Qr recovered charge IF =1A; VR = 100 V; dIF/dt = 100 A/µs; Tj =25 °C -13 - nC trr reverse recovery time IF =1A; VR =30V; dIF/dt = 50 A/µs; Tj =25 °C - 3052ns IF =8A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C - 3240ns IF =8A; VR = 400 V; dIF/dt = 500 A/µs; Tj =25 °C; see Figure 5 -20 - ns IRM peak reverse recovery current IF =8A; VR = 400 V; dIF/dt = 50 A/µs; Tj = 125 °C -1.5 5.5 A IF =8A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C -9.5 12 A VFR forward recovery voltage IF =10A; dIF/dt = 100 A/µs; Tj =25°C; see Figure 6 -8 10 V Fig 4. Forward current as a function of forward voltage Fig 5. Reverse recovery definitions; ramp recovery 003aac976 0 4 8 12 16 20 012 34 VF (V) IF (A) (1) (2) (3) 003aac562 trr time 100 % 25 % IF dlF dt IR IRM Qr |
同様の部品番号 - BYC8D-600 |
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同様の説明 - BYC8D-600 |
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