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2SK170-BL データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SK170-BL
部品情報  Low Noise Audio Amplifier Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK170-BL データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK170
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
Low Noise Audio Amplifier Applications
• Recommended for first stages of EQ and M.C. head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High breakdown voltage: VGDS = −40 V
• Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = −30 V, VDS = 0
−1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = −100 μA
−40
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
−0.2
−1.5
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
22
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
30
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
6
pF
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f
= 1 kHz
1.0
10
Noise figure
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f
= 1 kHz
0.5
2
dB
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Unit: mm
JEDEC
TC-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)


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