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2SK209-Y データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SK209-Y
部品情報  Audio Frequency Low Noise Amplifier Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK209-Y データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK209
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = −30 V, VDS = 0
−1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = −100 μA
−50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
−0.2
−1.5
V
Forward transfer admittance
⎪Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF (1)
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
5
dB
Noise figure
NF (2)
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
1
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Unit: mm
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)


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