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DAC0800LCMX データシート(PDF) 1 Page - Texas Instruments |
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DAC0800LCMX データシート(HTML) 1 Page - Texas Instruments |
1 / 20 page DAC0800, DAC0802 www.ti.com SNAS538C – JUNE 1999 – REVISED FEBRUARY 2013 DAC0800/DAC0802 8-Bit Digital-to-Analog Converters Check for Samples: DAC0800, DAC0802 1 FEATURES DESCRIPTION The DAC0800 series are monolithic 8-bit high-speed 2 • Fast Settling Output Current: 100 ns current-output digital-to-analog converters (DAC) • Full Scale Error: ±1 LSB featuring typical settling times of 100 ns. When used • Nonlinearity Over Temperature: ±0.1% as a multiplying DAC, monotonic performance over a 40 to 1 reference current range is possible. The • Full Scale Current Drift: ±10 ppm/°C DAC0800 series also features high compliance • High Output Compliance: −10V to +18V complementary current outputs to allow differential • Complementary Current Outputs output voltages of 20 Vp-p with simple resistor loads. The reference-to-full-scale current matching of better • Interface Directly with TTL, CMOS, PMOS and than ±1 LSB eliminates the need for full-scale trims in Others most applications, while the nonlinearities of better • 2 Quadrant Wide Range Multiplying Capability than ±0.1% over temperature minimizes system error • Wide Power Supply Range: ±4.5V to ±18V accumulations. • Low Power Consumption: 33 mW at ±5V The noise immune inputs will accept a variety of logic • Low Cost levels. The performance and characteristics of the device are essentially unchanged over the ±4.5V to ±18V power supply range and power consumption at only 33 mW with ±5V supplies is independent of logic input levels. The DAC0800, DAC0802, DAC0800C and DAC0802C are a direct replacement for the DAC-08, DAC-08A, DAC-08C, and DAC-08H, respectively. For single supply operation, refer to AN-1525. Typical Application Pin numbers represent the PDIP package. The SOIC package pin numbers differ from that of the PDIP package. Figure 1. ±20 VP-P Output Digital-to-Analog Converter These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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