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LM13700M データシート(PDF) 8 Page - Texas Instruments

部品番号 LM13700M
部品情報  LM13700 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
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LM13700
SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
Figure 20. Leakage Current Test Circuit
Figure 21. Differential Input Current Test Circuit
Circuit Description
The differential transistor pair Q4 and Q5 form a transconductance stage in that the ratio of their collector currents
is defined by the differential input voltage according to the transfer function:
(1)
where VIN is the differential input voltage, kT/q is approximately 26 mV at 25°C and I5 and I4 are the collector
currents of transistors Q5 and Q4 respectively. With the exception of Q12 and Q13, all transistors and diodes are
identical in size. Transistors Q1 and Q2 with Diode D1 form a current mirror which forces the sum of currents I4
and I5 to equal IABC:
I4 + I5 = IABC
(2)
where IABC is the amplifier bias current applied to the gain pin.
For small differential input voltages the ratio of I4 and I5 approaches unity and the Taylor series of the In function
can be approximated as:
(3)
(4)
Collector currents I4 and I5 are not very useful by themselves and it is necessary to subtract one current from the
other. The remaining transistors and diodes form three current mirrors that produce an output current equal to I5
minus I4 thus:
(5)
The term in brackets is then the transconductance of the amplifier and is proportional to IABC.
Linearizing Diodes
For differential voltages greater than a few millivolts, Equation 3 becomes less valid and the transconductance
becomes increasingly nonlinear. Figure 22 demonstrates how the internal diodes can linearize the transfer
function of the amplifier. For convenience assume the diodes are biased with current sources and the input
signal is in the form of current IS. Since the sum of I4 and I5 is IABC and the difference is IOUT, currents I4 and I5
can be written as follows:
(6)
Since the diodes and the input transistors have identical geometries and are subject to similar voltages and
temperatures, the following is true:
8
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