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TPS1100PWLE データシート(PDF) 7 Page - Texas Instruments |
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TPS1100PWLE データシート(HTML) 7 Page - Texas Instruments |
7 / 14 page TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 7 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE (NORMALIZED) vs JUNCTION TEMPERATURE 1.2 0.9 0.8 0.6 1.3 1.4 1.5 1.1 1 0.7 – 50 0 50 100 150 TJ – Junction Temperature – °C VGS = – 10 V ID = – 1A Figure 8 – 0.1 0 – 0.6 –1.2 –1.8 SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE –1 –10 – 0.2 – 0.4 – 0.8 – 1 –1.4 –1.6 VSD – Source-to-Drain Voltage – V Pulse Test TJ = 150°C TJ = 25°C TJ = – 40°C Figure 9 0.2 0.1 0 – 1 – 3 – 5 – 7 0.3 0.4 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs GATE-TO-SOURCE VOLTAGE 0.5 – 9 – 11 – 13 – 15 VGS – Gate-to-Source Voltage – V 0.6 0.7 ID = – 1 A TJ = 25°C Figure 10 – 1.2 – 1.1 – 1.3 – 1.4 GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE – 1.5 – 50 0 50 100 150 – 1 – 0.9 TJ – Junction Temperature – °C ID = – 250 µA |
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同様の説明 - TPS1100PWLE |
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