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74AUP1G02GF データシート(PDF) 9 Page - NXP Semiconductors

部品番号 74AUP1G02GF
部品情報  Low-power 2-input NOR gate
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
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74AUP1G02GF データシート(HTML) 9 Page - NXP Semiconductors

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74AUP1G02
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 June 2012
9 of 21
NXP Semiconductors
74AUP1G02
Low-power 2-input NOR gate
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in
μW).
PD =CPD
× VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
Tamb = 25
°C
CPD
power dissipation capacitance f = 1 MHz; VI = GND to VCC
[3]
VCC = 0.8 V
-
2.6
-
pF
VCC = 1.1 V to 1.3 V
-
2.7
-
pF
VCC = 1.4 V to 1.6 V
-
2.9
-
pF
VCC = 1.65 V to 1.95 V
-
3.1
-
pF
VCC = 2.3 V to 2.7 V
-
3.5
-
pF
VCC = 3.0 V to 3.6 V
-
4.1
-
pF
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9
Symbol
Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Unit
Min
Max
Min
Max
CL = 5 pF
tpd
propagation delay
A, B to Y; see Figure 8
[1]
VCC = 1.1 V to 1.3 V
2.1
12.1
2.1
13.4
ns
VCC = 1.4 V to 1.6 V
1.4
7.8
1.4
8.6
ns
VCC = 1.65 V to 1.95 V
1.1
6.2
1.1
6.9
ns
VCC = 2.3 V to 2.7 V
0.9
4.6
0.9
5.1
ns
VCC = 3.0 V to 3.6 V
0.8
4.0
0.8
4.4
ns
CL = 10 pF
tpd
propagation delay
A, B to Y; see Figure 8
[1]
VCC = 1.1 V to 1.3 V
2.2
14.3
2.2
15.8
ns
VCC = 1.4 V to 1.6 V
1.7
9.2
1.7
10.2
ns
VCC = 1.65 V to 1.95 V
1.5
7.3
1.5
8.1
ns
VCC = 2.3 V to 2.7 V
1.2
5.6
1.2
6.2
ns
VCC = 3.0 V to 3.6 V
1.2
5.0
1.2
5.5
ns


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