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CSD13381F4 データシート(PDF) 1 Page - Texas Instruments

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部品番号 CSD13381F4
部品情報  12 V, N-Channel FemtoFET??MOSFET
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

CSD13381F4 データシート(HTML) 1 Page - Texas Instruments

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background image
D
G
S
0.35
mm
CSD13381F4
www.ti.com
SLPS448A – JULY 2013 – REVISED NOVEMBER 2013
12 V, N-Channel FemtoFET™ MOSFET
Check for Samples: CSD13381F4
PRODUCT SUMMARY
1
FEATURES
VDS
Drain-to-Source Voltage
12
V
2
Low On Resistance
Qg
Gate Charge Total (4.5V)
1060
pC
Low Qg and Qgd
Qgd
Gate Charge Gate to Drain
140
pC
Low Threshold Voltage
VGS = 1.8V
310
RDS(on)
Drain-to-Source On Resistance
VGS = 2.5 V
170
m
Ultra-Small Footprint (0402 Case Size)
VGS = 4.5 V
140
1.0 mm x 0.6 mm
VGS(th)
Threshold Voltage
0.85
V
Ultra-Low Profile
0.35 mm Height
Text Added For Spacing
Integrated ESD Protection Diode
ORDERING INFORMATION
Device
Qty
Media
Package
Ship
Rated > 4 kV HBM
7-Inch
Rated > 2 kV CDM
CSD13381F4
3000
Reel
Femto(0402) 1.0 mm x
Tape and
Pb and Halogen Free
0.6 mm SMD Lead Less
Reel
7-Inch
CSD13381F4T
250
Reel
RoHS Compliant
Text Added For Spacing
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Optimized for Load Switch Applications
TA = 25°C unless otherwise stated
VALUE
UNIT
Optimized for General Purpose Switching
VDS
Drain-to-Source Voltage
12
V
Applications
VGS
Gate-to-Source Voltage
8
V
Single-Cell Battery Applications
ID
Continuous Drain Current, TA = 25°C
(1)
2.1
A
IDM
Pulsed Drain Current, TA = 25°C
(2)
7
A
Handheld and Mobile Applications
PD
Power Dissipation(1)
500
mW
Human Body Model (HBM)
4
kV
DESCRIPTION
ESD
Rating Charged Device Model (CDM)
2
kV
The FemtoFET™ MOSFET technology has been
TJ,
Operating Junction and Storage
designed and optimized to minimize the footprint in
–55 to 150
°C
TSTG
Temperature Range
many
handheld
and
mobile
applications.
This
Avalanche Energy, single pulse ID = 7.4 A,
technology is capable of replacing standard small
EAS
2.7
mJ
L = 0.1 mH, RG = 25 Ω
signal MOSFETs while providing at least a 60%
(1) Typical RθJA = 90°C/W on 1-inch
2 (6.45-cm2), 2-oz. (0.071-
reduction in footprint size.
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
.
(2) Pulse duration
≤300 μs, duty cycle ≤2%
Typical Part Dimensions
Top View
.
.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
FemtoFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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