2SD1802 datasheet(1/2 Pages) WINNERJOIN

部品番号	2SD1802

部品情報	TRANSISTOR (NPN)

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メーカー	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

2SD1802 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

1

W (Tamb=25

℃)

Collector current

ICM:

3

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

10µAµ, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA, IC=0

6

V

Collector cut-off current

ICBO

VCB=40V, IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

1

µA

hFE(1)

VCE=2V, IC=100mA

100

560

DC current gain

hFE(2)

VCE=2V, IC=3A

35

Collector-emitter saturation voltage

VCE(sat)

IC=2A, IB=100mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=2A, IB=100mA

1.2

V

Transition frequency

fT

VCE=10V, IC=50mA

150

MHz

Collector output capacitance

Cob

VCB=10V, IE=0,f=1MHz

25

pF

Turn-off time

ton

70

Fall time

tf

650

Storage time

ts

Vcc=25V, Ic=1A

IB1=-IB2=0.1A

35

nS

CLASSIFICATION OF hFE(1)

Rank

R

S

T

U

Range

100-200

140-280

200-400

280-560

Marking

TO-251

TO-252-2

1. BASE

2. COLLECTOR

3. EMITTER

0. 51¡ À

0. 10

0. 51¡ À

0. 05

0¡ «

0. 10

2. 30¡ À

0. 10

6. 50¡ À

0. 15

5. 30¡ À

0. 10

0. 60¡ À

0. 10

0. 80¡ À

0. 10

2. 30¡ À

0. 10

2. 30¡ À

0. 10

1. 20

¡«

9¡ ã

0. 51

0¡ ã

5¡ ã

1. 20

0. 5 1¡ À

0. 03

5¡ ã

2. 3 0¡ À

0. 05

2. 3 0¡ À

0. 0 5

0. 80¡ À

0. 0 5

0. 6 0¡ À

0. 0 5

5. 3 0¡ À

0. 05

6. 5 0¡ À

0. 10

0. 51 ¡ À

0. 03

2 . 30¡ À

0. 05

5¡ ã

1 2 3

2SD1802

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WEJ ELECTRONIC CO.

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