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LMZ31506RUQR データシート(PDF) 3 Page - Texas Instruments

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部品番号 LMZ31506RUQR
部品情報  6A SIMPLE SWITCHER짰 Power Module with 2.95V-14.5V Input and Current Sharing in QFN Package
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

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LMZ31506
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SNVS993 – JUNE 2013
THERMAL INFORMATION
LMZ31506
THERMAL METRIC(1)
RUQ47
UNIT
47 PINS
θJA
Junction-to-ambient thermal resistance(2)
13
θJCtop
Junction-to-case (top) thermal resistance (3)
9
θJCbot
Junction-to-case (bottom) thermal resistance (4)
3.8
°C/W
θJB
Junction-to-board thermal resistance (5)
6
ψJT
Junction-to-top characterization parameter(6)
2.5
ψJB
Junction-to-board characterization parameter(7)
5
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance,
θJA, applies to devices soldered directly to a 100 mm x 100 mm double-sided PCB with
1 oz. copper and natural convection cooling. Additional airflow reduces
θJA.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard
test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(5)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(6)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature, TJ, of a device in a real system, using a
procedure described in JESD51-2A (sections 6 and 7). TJ = ψJT * Pdis + TT; where Pdis is the power dissipated in the device and TT is
the temperature of the top of the device.
(7)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature, TJ, of a device in a real system, using a
procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB * Pdis + TB; where Pdis is the power dissipated in the device and TB is
the temperature of the board 1mm from the device.
PACKAGE SPECIFICATIONS
LMZ31506
UNIT
Weight
1.26 grams
Flammability
Meets UL 94 V-O
MTBF Calculated reliability
Per Bellcore TR-332, 50% stress, TA = 40°C, ground benign
33.9 MHrs
Copyright © 2013, Texas Instruments Incorporated
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