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SMV512K32HFG データシート(PDF) 9 Page - Texas Instruments

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部品番号 SMV512K32HFG
部品情報  16-Mb RADIATION-HARDENED SRAM
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
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SMV512K32HFG データシート(HTML) 9 Page - Texas Instruments

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A[18:0]
GZ
DQ(31:0)
MBE
tGLQV
tGLMV
tGHQZ1
t
, t
AVQV1
AVMV
tGLQX1
tGLMX
tGHMZ
Data valid
Data valid
Assumptions: E1Z low, E2 high, WZ high and SCRUBZ high. Reading uninitialized addresses
will cause MBE to be asserted.
tGHMZ
SMV512K32-SP
www.ti.com
SLVSA21H – JUNE 2011 – REVISED JULY 2013
Figure 6. Read Cycle 3, Output Enable-Controlled Access
Write Operation With Write-Through Support
A combination of WZ and E1Z low with E2 high defines a write cycle. The state of GZ is “don’t care” for a write
cycle although it may be necessary to set GZ high for convenient setup of new data for some system operation
modes in order to avoid data bus contention. During a write operation, data just written will be sent to the
outputs. When the write operation has been completed, the output data bus will be updated by controlling either
GZ going low or WZ goes high while GZ low. The outputs are placed in a high impedance state when GZ is high
or WZ is low during standard read and write cycles.
Write cycle 1 (Figure 7): Access and data write through controlled by WZ is initiated when WZ goes low and
is terminated by WZ going high while E1Z and E2 remain active. The write pulse width is determined by tWLWH
and tETWH. To avoid bus contention, tWLQZ must be satisfied before write data is applied to the DQ[31:0] pins.
In addition, at the end of the write operation write data must be removed from the DQ[31:0] pins after tWHDX is
met, but before tWHQX. The output access time is determined by tWHQV as long as GZ remains low.
Write cycle 1a (Figure 8): WZ controlled write cycle with GZ high is similar to write cycle 1 but with GZ fixed
high so data outputs remain in high impedance state.
Write cycle 2 (Figure 9): WZ controlled write access with data write through controlled by GZ is similar to
write cycle 1 with the difference being that the output data comes out when GZ goes low with WZ high. The
output access time is determined by tGLQV. The GZ high pulse is used to keep the DQ[31:0] outputs in a high
impedance state during the write operation to avoid bus contention.
Write cycle 3 (Figure 10): Chip enable controlled write access with data write through controlled by WZ is
initiated when E1Z or E2 goes active, and the data write operation is terminated by WZ going high. The write
pulse width is defined by tETWHZ from the latter of E1Z or E2 going active to WZ high. The output access time
is determined by tWHQV as long as GZ remains low. As with write cycle 1, the write data must be removed
from the DQ[31:0] pins after the input data hold time, tWHDX, but before tWHQX.
Write cycle 3a (Figure 11): chip enabled controlled write cycle with GZ high is similar to write cycle3, but with
GZ fixed high so the data outputs remain in a high impedance state.
Write cycle 4 (Figure 12): Chip enable controlled write access with data write through controlled by GZ is
similar to Write cycle 3 with the difference that the data output is controlled by GZ going low. The output
access time is determined by tGLQV. The GZ high pulse is used to keep the DQ[31:0] pins in a high
impedance state during the write operation to avoid bus contention.
Copyright © 2011–2013, Texas Instruments Incorporated
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