IRF6626PBF datasheet(4/10 Pages) IRF

部品番号	IRF6626PBF

部品情報	RoHs Compliant

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メーカー	IRF [International Rectifier]

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IRF6626PbF

4

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Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM

2.5V

≤60µs PULSE WIDTH

Tj = 25°C

2.5V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

2.5V

≤60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM

2.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

ID = 16A

VGS = 10

VGS = 4.5V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

20

40

60

80

100

ID, Drain Current (A)

0

5

10

15

20

25

TJ = 25°C

Vgs = 3.0V

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

1

2

3

4

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 150°C

TJ = 25°C

TJ = -40°C

VDS = 15V

≤60µs PULSE WIDTH

同様の部品番号 - IRF6626PBF

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF6626	632Kb / 9P	DirectFET TM Power MOSFET
	IRF6626	641Kb / 10P	RoHS compliant containing no lead or bromide
	IRF6626TR1	641Kb / 10P	RoHS compliant containing no lead or bromide

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