November 2013

©2006 Fairchild Semiconductor Corporation

FQA11N90_F109 Rev. C1

www.fairchildsemi.com

1

Thermal Characteristics

Symbol

Parameter

FQA11N90_F109

Unit

Drain to Source Voltage

900

V

Drain Current

11.4

A

7.2

A

Drain Current

- Pulsed

(Note 1)

45.6

A

Gate to Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

1000

mJ

Avalanche Current

(Note 1)

11.4

A

Repetitive Avalanche Energy

(Note 1)

30

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

Power Dissipation

300

W

2.38

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FQA11N90_F109

Unit

Thermal Resistance, Junction to Case, Max

0.42

Thermal Resistance, Junction to Ambient, Max

40

FQA11N90_F109

900 V, 11.4 A, 960 m

Ω

Features

• Low Gate Charge (Typ. 72 nC)

• Low Crss (Typ. 30 pF)

• 100% Avalanche Tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable

for switched mode power supplies, active power factor

correction (PFC), and electronic lamp ballasts.

TO-3PN

G

D

S

G

S

D