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STU8N80K5 データシート(PDF) 1 Page - STMicroelectronics |
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STU8N80K5 データシート(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. March 2013 DocID023544 Rev 4 1/16 16 STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFET in TO-220 and IPAK packages Datasheet − production data Figure 1. Internal schematic diagram Features • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. D(2,TAB) G(1) S(3) AM01476v1 TO-220 1 2 3 TAB 3 2 1 TAB IPAK Order codes VDS RDS(on)max. ID PTOT STP8N80K5 800 V 0.95 Ω 6 A 110 W STU8N80K5 Table 1. Device summary Order codes Marking Package Packaging STP8N80K5 8N80K5 TO-220 Tube STU8N80K5 IPAK www.st.com |
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