STGW40V60DF datasheet(4/17 Pages) STMICROELECTRONICS

部品番号	STGW40V60DF

部品情報	Trench gate field-stop IGBT, V series

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Electrical characteristics

STGW40V60DF, STGWT40V60DF

4/17

DocID024402 Rev 5

2

Electrical characteristics

T

J

= 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)CES

Collector-emitter

breakdown voltage

(V

GE

= 0)

I

C

= 2 mA

600

V

CE(sat)

Collector-emitter saturation

voltage

V

GE

= 15 V, I

C

= 40 A

1.8

2.3

V

GE

= 15 V, I

C

= 40 A

T

J

= 125 °C

2.15

V

GE

= 15 V, I

C

= 40 A

T

J

= 175 °C

2.35

V

F

Forward on-voltage

I

F

= 40 A

1.7

2.45

V

I

F

= 40 A, T

J

= 125 °C

1.4

V

I

F

= 40 A, T

J

= 175 °C

1.3

V

GE(th)

Gate threshold voltage

V

CE

= V

GE

, I

C

= 1 mA

5

6

7

V

I

CES

Collector cut-off current

(V

GE

= 0)

V

CE

= 600 V

25

μA

I

GES

Gate-emitter leakage

current (V

CE

= 0)

V

GE

= ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

ies

Input capacitance

V

CE

= 25 V, f = 1 MHz,

V

GE

= 0

-5400

-

pF

C

oes

Output capacitance

-

220

-

pF

C

res

Reverse transfer

capacitance

-180

-

pF

Q

g

Total gate charge

V

CC

= 480 V, I

C

= 40 A,

V

GE

= 15 V, see

Figure 29

-226

-

nC

Q

ge

Gate-emitter charge

-

38

-

nC

Q

gc

Gate-collector charge

-

95

-

nC

同様の部品番号 - STGW40V60DF

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STGW40V60DF	1Mb / 21P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed April 2014 Rev 8

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