STP270N8F7 datasheet(3/21 Pages) STMICROELECTRONICS

部品番号	STP270N8F7

部品情報	N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

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STH270N8F7-2, STH270N8F7-6, STP270N8F7

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

80

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

Limited by package

Drain current (continuous)

180

A

ID

(1)

Drain current (continuous) at TC = 100 °C

180

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

720

A

PTOT

(3)

3.

This value is rated according to Rthj-c

Total dissipation at TC = 25 °C

315

W

EAS

(4)

4.

Starting Tj = 25°C, Id = 65 A, Vdd = 50 V

Single pulse avalanche energy

1.16

J

TJ

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

H2PAK-2,

H2PAK-6

TO-220

Rthj-case

Thermal resistance junction-case

0.48

°C/W

Rthj-pcb

(1)

1.

When mounted on FR-4 board of 1 inch2, 2oz Cu

Thermal resistance junction-pcb

35

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

同様の部品番号 - STP270N8F7

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同様の説明 - STP270N8F7

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