IRF7424TR datasheet(1/9 Pages) IRF

部品番号	IRF7424TR

部品情報	Ultra Low On-Resistance

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メーカー	IRF [International Rectifier]

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Parameter

Max.

Units

VDS

Drain- Source Voltage

-30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -10V

-11

ID @ TA= 70°C

Continuous Drain Current, VGS @ -10V

-9.3

A

IDM

Pulsed Drain Current

-47

PD @TA = 25°C

Power Dissipation

2.5

PD @TA = 70°C

Power Dissipation

1.6

Linear Derating Factor

20

mW/°C

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

3/29/01

www.irf.com

1

IRF7424

HEXFET® Power MOSFET

These P-Channel MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve the extremely low on-resistance per silicon

area.

This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

PD- 94024A

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

50

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

Top View

8

1

2

3

4

5

6

7

D

G

S

A

D

S

VDSS

RDS(on) max (mΩ)

Ω)

ID

-30V

13.5@VGS = -10V

-11A

22@VGS = -4.5V

-8.8A

SO-8

同様の部品番号 - IRF7424TR

メーカー	部品番号	データシート	部品情報
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