MTV20N50E

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

25

50

75

100

125

150

t, TIME (s)

Figure 14. Thermal Response

Figure 15. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

0

1200

800

400

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1.0

1.0

10

100

0.1

dc

100

µs

1 ms

10 ms

1000

ID = 20 A

1.0

0.1

0.001

0.01

1.0E–05

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

0.2

1600

2000

0.1