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AM29F010-45FCB データシート(PDF) 9 Page - Advanced Micro Devices

部品番号 AM29F010-45FCB
部品情報  1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F010-45FCB データシート(HTML) 9 Page - Advanced Micro Devices

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Am29F010
9
Table 3.
Am29F010 Autoselect Codes (High Voltage Method)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables
both program and erase operations in previously pro-
tected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure re-
quires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 20495. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
ous system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= VIL, CE# = VIH or WE# = VIH. To initiate a write cy-
cle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
aut om a t ic ally res e t to reading array dat a on
power-up.
Description
CE#
OE#
WE#
A16
to
A14
A13
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
Manufacturer ID: AMD
L
L
H
X
X
VID
XL
XL
L
01h
Device ID: Am29F010
L
L
H
X
X
VID
XL
XL
H
20h
Sector Protection Verification
L
L
H
SA
X
VID
XL
X
H
L
01h
(protected)
00h
(unprotected)


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