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LM119H-SMD データシート(PDF) 8 Page - Texas Instruments |
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LM119H-SMD データシート(HTML) 8 Page - Texas Instruments |
8 / 25 page LM119QML SNOSAN3B – JULY 2008 – REVISED MARCH 2013 www.ti.com SMD 5962-9679801, HIGH DOSE RATE DC DELTA Parameters The following conditions apply, unless otherwise specified. VCM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only. Sub- Symbol Parameter Conditions Notes Min Max Units groups +ICC Positive Supply Current ±VCC = ±15V, VO = Low -1.0 1.0 mA 1 V+ = 5.6V thru 1.4K Ω -ICC Negative Supply Current ±VCC = ±15V, VO = Low -0.5 0.5 mA 1 V+ = 5.6V thru 1.4K Ω VIO Input Offset Voltage +V CC = 5V, VCM = 1V, RS ≤ 5KΩ -0.4 0.4 mV 1 SMD 5962-9679801, High Dose Rate 100K Post Radiation Parameters @ 25°C (1) The following conditions apply, unless otherwise specified. VCM = 0V Sub- Symbol Parameter Conditions Notes Min Max Units groups IIB Input Bias Current ±VCC = ±15V 1.0 µA 1 VCC = 5V 1.0 µA 1 VIO Input Offset Voltage +V CC = 5V, VCM = 1V, RS ≤ 5KΩ -4.0 4.0 mV 1 +V CC = 5V, VCM = 3V, RS ≤ 5KΩ -4.0 4.0 mV 1 ±VCC = ±15V, VCM = 12V, RS ≤ -4.0 4.0 mV 1 5K Ω ±VCC = ±15V, VCM = −12V, RS ≤ -4.0 4.0 mV 1 5K Ω (1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted parameters are ensured only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A. LM119 Electrical Characteristics SMD 5962-9679802, ELDRS FREE DC Parameters The following conditions apply, unless otherwise specified. VCM = 0V Sub- Symbol Parameter Conditions Notes Min Max Units groups +ICC Positive Supply Current ±VCC = ±15V, VO = Low 11 mA 1 V+ = 5.6V thru 1.4K Ω 11.5 mA 2, 3 -ICC Negative Supply Current ±VCC = ±15V, VO = Low -4.2 mA 1 V+ = 5.6V thru 1.4K Ω -4.5 mA 2 -6.0 mA 3 ILeak Output Leakage Current +V CC = 15V, -V CC = -1V, (1) 1.8 µA 1 VGnd = 0V, VO = 35V (1) 10 µA 2, 3 IIB Input Bias Current ±VCC = ±15V 0.47 µA 1 5 0.95 µA 2, 3 +V CC = 5V (2) 0.47 µA 1 5 (2) .95 µA 2, 3 (1) VI ≥ 8mV at extremes for ILeak and VI ≤ −8mV at extremes for VSat (VI to exceed VOS. (2) 5V differential across +VCC and −VCC. 8 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LM119QML |
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