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TC7S66FUT5LFT データシート(PDF) 3 Page - Toshiba Semiconductor |
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TC7S66FUT5LFT データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TC7S66F/FU 2009-09-30 3 Electrical Characteristics DC Electrical Characteristics Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 2.0 1.5 ⎯ ⎯ 1.5 ⎯ 4.5 3.15 ⎯ ⎯ 3.15 ⎯ 9.0 6.3 ⎯ ⎯ 6.3 ⎯ High level VIHC ⎯ 12.0 8.4 ⎯ ⎯ 8.4 ⎯ 2.0 ⎯ ⎯ 0.5 ⎯ 0.5 4.5 ⎯ ⎯ 1.35 ⎯ 1.35 9.0 ⎯ ⎯ 2.7 ⎯ 2.7 Control input voltage Low level VILC ⎯ 12.0 ⎯ ⎯ 3.6 ⎯ 3.6 V 4.5 ⎯ 192 340 ⎯ 400 9.0 ⎯ 110 170 ⎯ 200 VIN = VIHC VI/O = VCC to GND VI/O <= 1 mA 12.0 ⎯ 90 160 ⎯ 180 2.0 ⎯ 320 ⎯ ⎯ ⎯ 4.5 ⎯ 140 200 ⎯ 260 9.0 ⎯ 100 150 ⎯ 190 ON resistance RON VIN = VIHC VI/O = VCC or GND VI/O <= 1 mA 12.0 ⎯ 90 140 ⎯ 180 Ω Input/output leakage current (switch off) IOFF VOS = VCC or GND VIS = GND or VCC VIN = VILC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Switch input leakage current (switch on, output open) IIZ VOS = VCC or GND VIN = VIHC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Control input current IIN VIN = VCC or GND 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA 6.0 ⎯ ⎯ 1.0 ⎯ 10.0 9.0 ⎯ ⎯ 4.0 ⎯ 40.0 Quiescent device current ICC VIN = VCC or GND 12.0 ⎯ ⎯ 8.0 ⎯ 80.0 μA |
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