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IRF6717MTR1PBF データシート(PDF) 1 Page - International Rectifier

部品番号 IRF6717MTR1PBF
部品情報  RoHs Compliant and Halgen Free
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF6717MTR1PBF データシート(HTML) 1 Page - International Rectifier

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1
04/30/09
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.64mH, RG = 25Ω, IAS = 30A.
Notes:
IRF6717MPbF
IRF6717MTRPbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
l RoHs Compliant and Halgen Free

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
DirectFET
™ ISOMETRIC
MX
Description
The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
0
20406080
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
ID= 30A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
290
Max.
30
220
300
±20
25
38
30
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
46nC
14nC
6.6nC
31nC
35nC
1.8V
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.95m
Ω@ 10V 1.6mΩ@ 4.5V
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 30A
TJ = 25°C
TJ = 125°C
PD - 97345A


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