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STB45N65M5 データシート(PDF) 5 Page - STMicroelectronics |
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STB45N65M5 データシート(HTML) 5 Page - STMicroelectronics |
5 / 20 page DocID022854 Rev 4 5/20 STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td (v) tr (v) tf (i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) - 79.5 11 9.3 16 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 35 140 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 35 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19) - 392 7.4 38 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19) - 468 9.7 42 ns µC A |
同様の部品番号 - STB45N65M5 |
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同様の説明 - STB45N65M5 |
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