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STF5N52K3 データシート(PDF) 1 Page - STMicroelectronics |
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STF5N52K3 データシート(HTML) 1 Page - STMicroelectronics |
1 / 23 page December 2010 Doc ID 16952 Rev 2 1/23 23 STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID Pw STB5N52K3 STD5N52K3 STF5N52K3 STP5N52K3 STU5N52K3 525 V < 1.5 Ω 4.4 A 70 W 70 W 25 W 70 W 70 W 1 2 3 TO-220 IPAK TO-220FP 1 2 3 3 2 1 DPAK 1 3 1 3 D²PAK D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STB5N52K3 5N52K3 D²PAK Tape and reel STD5N52K3 DPAK STF5N52K3 TO-220FP Tube STP5N52K3 TO-220 STU5N52K3 IPAK www.st.com |
同様の部品番号 - STF5N52K3 |
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同様の説明 - STF5N52K3 |
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