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74AUP1G32GN データシート(PDF) 9 Page - NXP Semiconductors |
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74AUP1G32GN データシート(HTML) 9 Page - NXP Semiconductors |
9 / 21 page 74AUP1G32 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 7 — 8 July 2013 9 of 21 NXP Semiconductors 74AUP1G32 Low-power 2-input OR-gate [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of the outputs. Tamb = 25 C CPD power dissipation capacitance f = 1 MHz; VI = GND to VCC [3] VCC = 0.8 V - 2.5 - pF VCC = 1.1 V to 1.3 V - 2.6 - pF VCC = 1.4 V to 1.6 V - 2.8 - pF VCC = 1.65 V to 1.95 V - 2.9 - pF VCC = 2.3 V to 2.7 V - 3.4 - pF VCC = 3.0 V to 3.6 V - 3.9 - pF Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9 Symbol Parameter Conditions Min Typ [1] Max Unit Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9 Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Max Min Max CL = 5 pF tpd propagation delay A, B to Y; see Figure 8 [1] VCC = 1.1 V to 1.3 V 2.1 11.9 2.1 13.2 ns VCC = 1.4 V to 1.6 V 1.4 7.5 1.4 8.3 ns VCC = 1.65 V to 1.95 V 1.2 6.0 1.2 6.6 ns VCC = 2.3 V to 2.7 V 1.0 4.6 1.0 5.1 ns VCC = 3.0 V to 3.6 V 0.9 4.1 0.9 4.6 ns CL = 10 pF tpd propagation delay A, B to Y; see Figure 8 [1] VCC = 1.1 V to 1.3 V 2.1 13.8 2.1 15.2 ns VCC = 1.4 V to 1.6 V 1.7 8.7 1.7 9.6 ns VCC = 1.65 V to 1.95 V 1.5 6.9 1.5 7.7 ns VCC = 2.3 V to 2.7 V 1.3 5.5 1.3 6.1 ns VCC = 3.0 V to 3.6 V 1.2 5.0 1.2 5.5 ns |
同様の部品番号 - 74AUP1G32GN |
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同様の説明 - 74AUP1G32GN |
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