KSE44H11TU datasheet(1/4 Pages) FAIRCHILD

部品番号	KSE44H11TU

部品情報	General Purpose Power Switching Applications

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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Rev. A1, June 2001

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse test: PW

≤300µs, Duty cycle≤2%

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

: KSE44H 1,2

: KSE44H 4,5

: KSE44H 7,8

: KSE44H 10,11

30

45

60

80

V

VEBO

Emitter- Base Voltage

5

V

IC

Collector Current (DC)

10

A

ICP

*Collector Current (Pulse)

20

A

PC

Collector Dissipation (TC=25°C)

50

W

PC

Collector Dissipation (Ta=25°C)

1.67

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

ICES

Collector Cut-off Current

VCE = Rated VCEO, VEB = 0

10

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

100

µA

hFE

*DC Current Gain

: KSE44H 1,4,7,10

: KSE44H 2,5,8,11

VCE = 1V, IC = 2A

35

60

VCE(sat)

*Collector-Emitter Saturation Voltage

: KSE44H 1, 4, 7 10

: KSE44H 2, 5, 8,11

IC = 8A, IB = 0.8A

IC = 8A, IB = 0.4A

1

V

VBE (sat)

*Base-Emitter Saturation Voltage

IC = 8A, IB = 0.8A

1.5

V

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.5A

50

MHz

Cob

Output Capacitance

VCB = 10V, f = 1MHz

130

pF

tON

Turn ON Time

VCC =20V, IC = 5A

IB1 = - IB2 = 0.5A

300

ns

tSTG

Storage Time

500

ns

tF

Fall Time

140

ns

KSE44H Series

General Purpose Power Switching Applications

• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A

• Fast Switching Speeds

• Complement to KSE45H

1.Base

2.Collector

3.Emitter

1

TO-220

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