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KSE44H11TU データシート(PDF) 1 Page - Fairchild Semiconductor |
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KSE44H11TU データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, Duty cycle≤2% Symbol Parameter Value Units VCEO Collector-Emitter Voltage : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 30 45 60 80 V V V V VEBO Emitter- Base Voltage 5 V IC Collector Current (DC) 10 A ICP *Collector Current (Pulse) 20 A PC Collector Dissipation (TC=25°C) 50 W PC Collector Dissipation (Ta=25°C) 1.67 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current VCE = Rated VCEO, VEB = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 µA hFE *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 VCE = 1V, IC = 2A 35 60 VCE(sat) *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A 1 1 V V VBE (sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A 1.5 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 50 MHz Cob Output Capacitance VCB = 10V, f = 1MHz 130 pF tON Turn ON Time VCC =20V, IC = 5A IB1 = - IB2 = 0.5A 300 ns tSTG Storage Time 500 ns tF Fall Time 140 ns KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H 1.Base 2.Collector 3.Emitter 1 TO-220 |
同様の部品番号 - KSE44H11TU |
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同様の説明 - KSE44H11TU |
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